Features • Compound CMOS and bipolar outputs reduce output current variation • 7A sink/3A source current • Fast propagation times (25 ns typical) • Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load) • Inverting and non-inverting inputs provide either configuration with a single device • Supply rail under-voltage lockout protection • Dedicated input ground (IN_REF) for split supply or single supply operation • Power Enhanced 6-pin LLP package (3.0mm x 3.0mm) or thermally enhanced MSOP8-EP package • Output swings from VCC to VEE which can be negative relative to input ground Description The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package (SOT23 equivalent footprint) or an 8-Lead exposed-pad MSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The LM5112 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

Also Recommended LM5110▲ Dual 5A Compound Gate Driver With Negative Output Voltage Capability LM5111▲ Dual 5A Low Side Compound Gate Driver MY BRIEFCASE                                       Click any "Briefcase" icon to add an item

Typical Application *click for larger image	Block Diagram click for larger image
Typical Performance click for larger image

Datasheet

Title		Size	Date	Other Language
	LM5112 Tiny 7A MOSFET Gate Driver	651 Kbytes	7-Apr-06

Featured Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1299: Application Note 1299 LM5041 Evaluation Board	287 Kbytes	16-Mar-04
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04

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	AN-1368: Application Note 1368 LM5115/5025A Evaluation Board	1364 Kbytes	5-Apr-05
	AN-1875: Application Note 1875 LM5073HE Evaluation Board With Active Bridge	230 Kbytes	2-Jul-08
	AN-1713: Application Note 1713 LM5116-12 Evaluation Board	313 Kbytes	3-Oct-07
	AN-1574: Application Note 1574 LM5073 Evaluation Board	464 Kbytes	24-Apr-07
	AN-1367: Application Note 1367 LM5115 HV DC Evaluation Board	943 Kbytes	18-Oct-05	中文
	AN-1596: Application Note 1596 LM5116 Evaluation Board	299 Kbytes	18-May-07
	AN-1819: Application Note 1819 LM5118 Evaluation Board	390 Kbytes	30-Apr-08
	AN-1628: Application Note 1628 Minimizing FET Losses For a High Input Rail Buck Converter	91 Kbytes	5-Sep-07	日本語 中文

Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LM5112MY	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5112MYX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5112SD	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5112SDX	ABCD150	0	34175	0	0	4234000	1	1201409060

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

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