Features • Independently drives two N-Channel MOSFETs • Compound CMOS and bipolar outputs reduce output current variation • 5A sink/3A source current capability • Two channels can be connected in parallel to double the drive current • Independent inputs (TTL compatible) • Fast propagation times (25 ns typical) • Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load) • Available in dual non-inverting, dual inverting and combination configurations • Supply rail under-voltage lockout protection (UVLO) • LM5111-4 UVLO configured to drive PFET through OUT_A and NFET through OUT_B • Pin compatible with industry standard gate drivers Description The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 package or the thermally enhanced MSOP8-EP package.

Also Recommended LM5110▲ Dual 5A Compound Gate Driver With Negative Output Voltage Capability LM5112▲ Single 7A Low Side Compound Gate Driver MY BRIEFCASE                                       Click any "Briefcase" icon to add an item

	Block Diagram click for larger image
Typical Performance click for larger image

Datasheet

Title		Size	Date	Other Language
	LM5111 Dual 5A Compound Gate Driver	288 Kbytes	5-Nov-07

Featured Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1299: Application Note 1299 LM5041 Evaluation Board	287 Kbytes	16-Mar-04
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04

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	AN-1368: Application Note 1368 LM5115/5025A Evaluation Board	1364 Kbytes	5-Apr-05
	AN-1875: Application Note 1875 LM5073HE Evaluation Board With Active Bridge	230 Kbytes	2-Jul-08
	AN-1713: Application Note 1713 LM5116-12 Evaluation Board	313 Kbytes	3-Oct-07
	AN-1574: Application Note 1574 LM5073 Evaluation Board	464 Kbytes	24-Apr-07
	AN-1367: Application Note 1367 LM5115 HV DC Evaluation Board	943 Kbytes	18-Oct-05	中文
	AN-1596: Application Note 1596 LM5116 Evaluation Board	299 Kbytes	18-May-07
	AN-1819: Application Note 1819 LM5118 Evaluation Board	390 Kbytes	30-Apr-08
	AN-1628: Application Note 1628 Minimizing FET Losses For a High Input Rail Buck Converter	91 Kbytes	5-Sep-07	日本語 中文

Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LM5111-1M	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-1MX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-1MY	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-1MYX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-2M	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-2MX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-2MY	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-2MYX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-3M	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-3MX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-3MY	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-3MYX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-4M	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-4MX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-4MY	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5111-4MYX	ABCD150	0	34175	0	0	4234000	1	1201409060

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

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