LM5111-4 UVLO configured to drive PFET through OUT_A and NFET through OUT_B
Pin compatible with industry standard gate drivers
Description
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each
“compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A
peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation
with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel
with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 package or
the thermally enhanced MSOP8-EP package.
Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR.
The Long Term Failure Rates were calculated
at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress
temperature of 150°C to an application temperature of 55°C.
For more information on Reliability Metrics, please click here.