Features • Independently drives two N-Channel MOSFETs • Compound CMOS and bipolar outputs reduce output current variation • 5A sink/3A source current capability • Two channels can be connected in parallel to double the drive current • Independent inputs (TTL compatible) • Fast propagation times (25 ns typical) • Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load) • Dedicated input ground pin (IN_REF) for split supply or single supply operation • Outputs swing from VCC to VEE which can be negative relative to input ground • Available in dual non-inverting, dual inverting and combination configurations • Shutdown input provides low power mode • Supply rail under-voltage lockout protection • Pin-out compatible with industry standard gate drivers Description The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. The ability to hold MOSFET gates off with a negative VGS voltage reduces losses when driving low threshold voltage MOSFETs often used as synchronous rectifiers. When driving with conventional positive only gate voltage, the IN_REF and VEE pins are connected together and referenced to a common ground. Under-voltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced LLP-10 packages. Applications • Synchronous Rectifier Gate Drivers • Switch-mode Power Supply Gate Driver • Solenoid and Motor Drivers • Power Level Shifter

Also Recommended LM5111▲ Dual 5A Low Side Gate Driver LM5112▲ Single 7A Low Side Compound Gate Driver MY BRIEFCASE                                       Click any "Briefcase" icon to add an item

Typical Application *click for larger image	Block Diagram *click for larger image
Typical Performance *click for larger image

Datasheet

Title		Size	Date	Other Language
	LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability	269 Kbytes	30-Oct-03

Featured Application Notes

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	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
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Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LM5110-1M	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-1MX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-1SD	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-1SDX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-2M	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-2MX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-2SD	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-2SDX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-3M	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-3MX	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-3SD	ABCD150	0	34175	0	0	4234000	1	1201409060
LM5110-3SDX	ABCD150	0	34175	0	0	4234000	1	1201409060

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

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