LM5110 - Dual 5A Compound Gate Driver with Negative Output Voltage Capability
Datasheet Packaging Samples & Pricing Reliability Application Notes Knowledge Base

Features
Independently drives two N-Channel MOSFETs
Compound CMOS and bipolar outputs reduce output current variation
5A sink/3A source current capability
Two channels can be connected in parallel to double the drive current
Independent inputs (TTL compatible)
Fast propagation times (25 ns typical)
Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load)
Dedicated input ground pin (IN_REF) for split supply or single supply operation
Outputs swing from VCC to VEE which can be negative relative to input ground
Available in dual non-inverting, dual inverting and combination configurations
Shutdown input provides low power mode
Supply rail under-voltage lockout protection
Pin-out compatible with industry standard gate drivers

General Description


The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. More...


Applications


Synchronous Rectifier Gate Drivers
Switch-mode Power Supply Gate Driver
Solenoid and Motor Drivers
Power Level Shifter
  Typical Application
*click for larger image


ParametersValues
Topology Forward, push-pull, etc
Supply Min 3.5 Volt
Supply Max 14 Volt
Peak Sink Current 5 Amp
Peak Source Current 2 Amp
Output Rise Time (tr) 15 ns
Output Fall Time tf 15 ns
Bottom Driver Prop Delay 25 ns
Quiescent Current 1 mA
HighSide Drive No
LowSide Drive Yes
Outputs 2
LowGate Enable No
UVLO Yes
Shut down Yes
Internal BootDiode Not required
Input Control Dual, independent
Special Features Compound driver, negative output capable, one inverted, one non-inverted
RegType MOSFET Driver
Temperature Min -40 deg C
Temperature Max 125 deg C


Typical Performance


*click for larger image


  Also Recommended
LM5111Dual 5A Low Side Gate Driver
LM5112Single 7A Low Side Compound Gate Driver
Additional Resources
Online Seminars Application Notes


Block Diagram


*click for larger image



Datasheet
RoHS Compliance Information Size in KbytesDate Click link below to Download
LM5110 Dual 5A Compound Gate Driver with Negative Output Voltage Capability 269
Kbytes
30-Oct-03 Download

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Package Availability, Models, Samples & Pricing
Part NumberPackageFactory Lead TimeModelsSamples &
Electronic
Orders
Budgetary PricingStd
Pack
Size
Package
Marking
Format
TypePinsSpec.MSL
Rating
Peak
Reflow
RoHS
Report
CAD
Symbols
WeeksQtyQty$US each
LM5110-1MSOIC NARROW8NOPB1260RoHS Download Full productionN/A
Samples
Buy Now
1K+$0.65rail
of
95
NSZXTT
5110
-1M
6 weeks5000
LM5110-2MSOIC NARROW8NOPB
STD
1
1
260
235
RoHS Download Full productionN/A
Samples
Buy Now
1K+$0.65rail
of
95
NSZXTT
5110
-2M
6 weeks2000
LM5110-3MSOIC NARROW8NOPB1260RoHS Download Full productionN/A
Samples
Buy Now
1K+$0.65rail
of
95
NSZXTT
5110
-3M
6 weeks1000
LM5110-1MXSOIC NARROW8NOPB1260RoHS Download Full productionN/A
 
Buy Now
1K+$0.65reel
of
2500
NSZXTT
5110
-1M
6 weeks7500
LM5110-2MXSOIC NARROW8NOPB1260RoHS Download Full productionN/A
 
Buy Now
1K+$0.65reel
of
2500
NSZXTT
5110
-2M
8 weeks3000
LM5110-3MXSOIC NARROW8NOPB1260RoHS Download Full productionN/A
 
Buy Now
1K+$0.65reel
of
2500
NSZXTT
5110
-3M
6 weeks5000
LM5110-1SDLLP10NOPB
STD
1
1
260
260
RoHS Download Full productionN/A
Samples
Buy Now
1K+$0.65reel
of
1000
NS
UZXYTT
5110-1
6 weeks2000
LM5110-2SDLLP10NOPB1260RoHS Download Full productionN/A
Samples
Buy Now
1K+$0.65reel
of
1000
NS
UZXYTT
5110-2
6 weeks1000
LM5110-3SDLLP10NOPB1260RoHS Download Full productionN/A
Samples
Buy Now
1K+$0.65reel
of
1000
NS
UZXYTT
5110-3
6 weeks2000
LM5110-1SDXLLP10NOPB1260RoHS Download Full productionN/A
 
Buy Now
1K+$0.65reel
of
4500
NS
UZXYTT
5110-1
6 weeksN/A
LM5110-2SDXLLP10NOPB1260RoHS Download Full productionN/A
 
Buy Now
1K+$0.65reel
of
4500
NS
UZXYTT
5110-2
6 weeksN/A
LM5110-3SDXLLP10NOPB1260RoHS Download Full productionN/A
 
Buy Now
1K+$0.65reel
of
4500
NS
UZXYTT
5110-3
6 weeksN/A

General Description


The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. The ability to hold MOSFET gates off with a negative VGS voltage reduces losses when driving low threshold voltage MOSFETs often used as synchronous rectifiers. When driving with conventional positive only gate voltage, the IN_REF and VEE pins are connected together and referenced to a common ground. Under-voltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced LLP-10 packages.

Reliability Metrics


Part Number Process EFR Reject EFR Sample Size PPM LTA Rejects LTA Device Hours FITS MTTF (Hours)
LM5110-1MABCD15003417500423400011201409060
LM5110-1MXABCD15003417500423400011201409060
LM5110-1SDABCD15003417500423400011201409060
LM5110-1SDXABCD15003417500423400011201409060
LM5110-2MABCD15003417500423400011201409060
LM5110-2MXABCD15003417500423400011201409060
LM5110-2SDABCD15003417500423400011201409060
LM5110-2SDXABCD15003417500423400011201409060
LM5110-3MABCD15003417500423400011201409060
LM5110-3MXABCD15003417500423400011201409060
LM5110-3SDABCD15003417500423400011201409060
LM5110-3SDXABCD15003417500423400011201409060

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

For more information on Reliability Metrics, please click here.


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[Information as of 7-Nov-2009]