Features • Drives both a high side and low side N-Channel MOSFET • High peak output current (1.4A sink / 1.3A source) • Independent TTL compatible inputs • Integrated bootstrap diode • Bootstrap supply voltage to 118V DC • Fast propagation times (27 ns typical) • Drives 1000 pF load with 15ns rise and fall times • Excellent propagation delay matching (2 ns typical) • Supply rail under-voltage lockout • Low power consumption • Pin compatible with ISL6700 Description The LM5107 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. An integrated on chip high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages. Applications • Current Fed push-pull converters • Half and Full Bridge power converters • Solid state motor drives • Two switch forward power converters

Also Recommended LM5102▲ Has Programmable Rising Edge Delay LM5104▲ Single PWM Input, Has Adaptive Deadtime With Programmable Delay LM5105▲ Programmable Deadtime MY BRIEFCASE                                       Click any "Briefcase" icon to add an item

	Block Diagram click for larger image
Typical Performance *click for larger image

Datasheet

Title		Size	Date	Other Language
	LM5107 100V / 1.4A Peak Half Bridge Gate Driver	678 Kbytes	16-Mar-05

Featured Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04

More Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04
	AN-1299: Application Note 1299 LM5041 Evaluation Board	287 Kbytes	16-Mar-04
	AN-1923: Application Note 1923 Current Sense Demo Board (SOIC) User`s Guide	3507 Kbytes	29-Apr-09	中文

Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LM5107MA	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5107SD	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5107SDX	ABCD150XV2	0	3601	0	0	1155496	4	327875145

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

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