Features • Drives both a high side and low side N-channel MOSFET • 1.8A peak output sink current • 1.2A peak output source current • Bootstrap supply voltage range up to 118V DC • Single TTL compatible Input • Programmable turn-on delays (Dead-time) • Enable Input pin • Fast turn-off propagation delays (32ns typical) • Drives 1000pF with 15ns rise and 10ns fall time • Supply rail under-voltage lockout • Low power consumption Description The LM5106 is a high voltage gate driver designed to drive both the high side and low side N-Channel MOSFETs in a synchronous buck or half bridge configuration. The floating high side driver is capable of working with rail voltages up to 100V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turn-on delay circuits. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Under-voltage lockout disables the gate driver when either the low side or the bootstrapped high side supply voltage is below the operating threshold. The LM5106 is offered in the MSOP-10 or thermally enhanced 10-pin LLP plastic package.

Also Recommended LM5102▲ High Voltage Half-Bridge Gate Driver With Programmable Delay LM5104▲ High Voltage Half-Bridge Gate Driver With Adaptive Delay LM5105▲ 100V Half Bridge Gate Driver With Programmable Dead-Time MY BRIEFCASE                                       Click any "Briefcase" icon to add an item

Typical Application *click for larger image	Block Diagram click for larger image
Typical Performance *click for larger image

Datasheet

Title		Size	Date	Other Language
	LM5106 100V Half Bridge Gate Driver with Programmable Dead-Time	351 Kbytes	20-Oct-09

Featured Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04

More Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04
	AN-1299: Application Note 1299 LM5041 Evaluation Board	287 Kbytes	16-Mar-04
	AN-1923: Application Note 1923 Current Sense Demo Board (SOIC) User`s Guide	3507 Kbytes	29-Apr-09	中文

Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LM5106MM	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5106MMX	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5106SD	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5106SDX	ABCD150XV2	0	3601	0	0	1155496	4	327875145

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

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