Features • Drives both a high side and low side N-channel MOSFET • Adaptive rising and falling edges with programmable additional delay • Single input control • Bootstrap supply voltage range up to 118V DC • Fast turn-off propagation delay (25 ns typical) • Drives 1000 pF loads with 15 ns rise and fall times • Supply rail under-voltage lockout Description The LM5104 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck configuration. The floating high-side driver is capable of working with supply voltages up to 100V. The high side and low side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high voltage diode is provided to charge high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. This device is available in the standard SOIC-8 pin and the LLP-10 pin packages.

Also Recommended LM5102▲ Individual Low Side And High Side Inputs, Programmable Delay LM5105▲ Has Low Gate Enable Pin LM2722 3.2A Pk, 4V To 7V Ic Vcc, 36V Max Vin MY BRIEFCASE                                       Click any "Briefcase" icon to add an item

Typical Application *click for larger image	Block Diagram click for larger image
Typical Performance *click for larger image

Datasheet

Title		Size	Date	Other Language
	LM5104 High Voltage Half-Bridge Gate Driver with Adaptive Delay	350 Kbytes	1-Dec-08

Featured Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04

More Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04
	AN-1299: Application Note 1299 LM5041 Evaluation Board	287 Kbytes	16-Mar-04
	AN-1923: Application Note 1923 Current Sense Demo Board (SOIC) User`s Guide	3507 Kbytes	29-Apr-09	中文

Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LM5104M	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5104MX	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5104SD	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5104SDX	ABCD150XV2	0	3601	0	0	1155496	4	327875145

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

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