Features • Drives both a high side and low side N-channel MOSFET • Independently programmable high and low side rising edge delay • Bootstrap supply voltage range up to 118V DC • Fast turn-off propagation delay (25 ns typical) • Drives 1000 pF loads with 15 ns rise and fall times • Supply rail under-voltage lockout • Low power consumption • Timer can be terminated midway through sequence Description The LM5102 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with supply voltages up to 100V. The outputs are independently controlled. The rising edge of each output can be independently delayed with a programming resistor. An integrated high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. This device is available in the standard MSOP-10 pin and the LLP-10 pin packages.

Also Recommended LM5104▲ Single PWM Input, Adaptive Deadtime W/ Programmable Delay LM5105▲ Programmable Dead Time MY BRIEFCASE                                       Click any "Briefcase" icon to add an item

Typical Application *click for larger image	Block Diagram click for larger image
Typical Performance *click for larger image

Datasheet

Title		Size	Date	Other Language
	LM5102 High Voltage Half-Bridge Gate Driver with Programmable Delay	368 Kbytes	14-Jan-04

Featured Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04

More Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04
	AN-1299: Application Note 1299 LM5041 Evaluation Board	287 Kbytes	16-Mar-04
	AN-1923: Application Note 1923 Current Sense Demo Board (SOIC) User`s Guide	3507 Kbytes	29-Apr-09	中文

Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LM5102MM	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5102MMX	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5102SD	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5102SDX	ABCD150XV2	0	3601	0	0	1155496	4	327875145

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

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