Features • Drives both a high-side and low-side N-Channel MOSFETs • Independent high and low driver logic inputs • Bootstrap supply voltage up to 118V DC • Fast propagation times (25 ns typical) • Drives 1000 pF load with 8 ns rise and fall times • Excellent propagation delay matching (3 ns typical) • Supply rail under-voltage lockout • Low power consumption • Pin compatible with HIP2100/HIP2101 Description The LM5100A/B/C and LM5101A/B/C High Voltage Gate Drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100V. The “A” versions provide a full 3A of gate drive while the “B” and “C” versions provide 2A and 1A respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, PSOP-8 pin and the LLP-10 pin packages. The LM5100C and LM5101C are also available in eMSOP-8 package.

Also Recommended LM5100C▲ Has CMOS-Type Threshold Inputs LM5101A▲ 3A Gate Driver Version LM5101B▲ 2A Gate Driver Version LM5102▲ Has Programmable Rising Edge Delay LM5104▲ Single PWM Input, Has Adaptive Deadtime With Programmable Delay MY BRIEFCASE                                       Click any "Briefcase" icon to add an item

	Block Diagram *click for larger image
Typical Performance *click for larger image

Datasheet

Title		Size	Date	Other Language
	LM5100A/B/C LM5101A/B/C 3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers	423 Kbytes	9-Jun-09

Featured Application Notes

Title		Size	Date	Other Language
	AN-1317: Application Note 1317 Selection of External Bootstrap Diode for LM510X Devices	92 Kbytes	25-Feb-04	日本語 中文
	AN-1331: Application Note 1331 LM5033 Evaluation Board	507 Kbytes	27-May-04

More Application Notes

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	AN-1299: Application Note 1299 LM5041 Evaluation Board	287 Kbytes	16-Mar-04
	AN-1923: Application Note 1923 Current Sense Demo Board (SOIC) User`s Guide	3507 Kbytes	29-Apr-09	中文

Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LM5101CMA	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5101CMAX	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5101CMY	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5101CMYE	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5101CMYX	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5101CSD	ABCD150XV2	0	3601	0	0	1155496	4	327875145
LM5101CSDX	ABCD150XV2	0	3601	0	0	1155496	4	327875145

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

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