Datasheet
RoHS Compliance Information
| Size in Kbytes | Date |
 |
| LM4666 Boomer ® Audio Power Amplifier Series Filterless High Efficiency Stereo 1.2W Switching Audio Amplifier |
642 Kbytes |
26-May-04 |
Download |
Package Availability, Models, Samples & Pricing
General Description
The LM4666 is a fully integrated single-supply high efficiency switching audio amplifier. It features an innovative modulator that eliminates the LC output filter used with typical switching amplifiers. Eliminating the output filter reduces parts count, simplifies circuit design, and reduces board area. The LM4666 processes analog inputs with a delta-sigma modulation technique that lowers output noise and THD when compared to conventional pulse width modulators.
The LM4666 is designed to meet the demands of mobile phones and other portable communication devices. Operating on a single 3V supply, it is capable of driving 8 transducer loads at a continuous average output of 450mW with less than 1%THD+N. Its flexible power supply requirements allow operation from 2.8V to 5.5V.
The LM4666 has high efficiency with an 8 transducer load compared to a typical Class AB amplifier. With a 3V supply, the IC's efficiency for a 100mW power level is 79%, reaching 84% at 450mW output power.
The LM4666 features a low-power consumption shutdown mode. Shutdown may be enabled by driving the Shutdown pin to a logic low (GND).
The LM4666 has fixed selectable gain of either 6dB or 12dB. The LM4666 has short circuit protection against a short from the outputs to VDD or GND.
Reliability Metrics
| Part Number |
Process |
EFR Reject |
EFR Sample Size |
PPM |
LTA Rejects |
LTA Device Hours |
FITS |
MTTF (Hours) |
|
LM4666SD | CMOS7 | 0 | 18406 | 0 | 0 | 1089000 | 4 | 309006723
|
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LM4666SDX | CMOS7 | 0 | 18406 | 0 | 0 | 1089000 | 4 | 309006723
|
Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR.
The Long Term Failure Rates were calculated
at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress
temperature of 150°C to an application temperature of 55°C.
For more information on Reliability Metrics, please click here.
[Information as of 7-Nov-2009]
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