Datasheet
RoHS Compliance Information
| Size in Kbytes | Date |
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| ADC12C105 12-Bit, 95/105 MSPS A/D Converter |
455 Kbytes |
22-Aug-07 |
Download |
ADC12C105 12-Bit, 95/105 MSPS A/D Converter (Japanese)
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737 Kbytes |
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Package Availability, Models, Samples & Pricing
General Description
The ADC12C105 is a high-performance CMOS analog-to-digital converter capable of converting analog input signals into 12-bit
digital words at rates up to 105 Mega Samples Per Second (MSPS). This converter uses a differential, pipelined architecture
with digital error correction and an on-chip sample-and-hold circuit to minimize power consumption and the external component
count, while providing excellent dynamic performance. A unique sample-and-hold stage yields a full-power bandwidth of 1 GHz.
The ADC12C105 may be operated from a single +3.0V or +3.3V power supply and consumes low power.
A separate +2.5V supply may be used for the digital output interface which allows lower power operation with reduced noise.
A power-down feature reduces the power consumption to very low levels while still allowing fast wake-up time to full operation.
The differential inputs accept a 2V full scale differential input swing. A stable 1.2V internal voltage reference is provided,
or the ADC12C105 can be operated with an external 1.2V reference. Output data format (offset binary versus 2's complement)
and duty cycle stabilizer are pin-selectable. The duty cycle stabilizer maintains performance over a wide range of clock
duty cycles.
The ADC12C105 is available in a 32-lead LLP package and operates over the industrial temperature range of −40°C to +85°C.
Reliability Metrics
| Part Number |
Process |
EFR Reject |
EFR Sample Size |
PPM |
LTA Rejects |
LTA Device Hours |
FITS |
MTTF (Hours) |
|
ADC12C105CISQX | CMOS9 | 1 | 7327 | 137 | 0 | 1103000 | 4 | 312979261
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Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR.
The Long Term Failure Rates were calculated
at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress
temperature of 150°C to an application temperature of 55°C.
For more information on Reliability Metrics, please click here.
Design Tools
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[Information as of 7-Nov-2009]
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