LM194 - SuperMatch Pair [Obsolete]
Datasheet Obsolete Versions Design Tools Application Notes Knowledge Base

Features
Emitter-base voltage matched to 50 µV
Offset voltage drift less than 0.1 µV/°C
Current gain (hFE) matched to 2%
Common-mode rejection ratio greater than 120 dB
Parameters guaranteed over 1 µA to 1 mA collector current
Extremely low noise
Superior logging characteristics compared to conventional pairs
Plug-in replacement for presently available devices

 

General Description


The LM194 and LM394 are junction isolated ultra well-matched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs. More...


Additional Resources


Online Seminars Design Tools

Application Notes



Datasheet
RoHS Compliance Information Size in KbytesDate Click link below to Download
LM194/LM394 Supermatch Pair 221
Kbytes
7-Jan-96 Download
LM194 Mil-Aero Datasheet MNLM194-X 104 Kbytes   Download

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Obsolete Versions

Obsolete PartAlternate Part or SupplierSourceLast Time Buy Date
LM194H-MLS
NONE
NONE
08 Dec 1998
LM194H/883
NONE
NATIONAL SEMICONDUCTOR
03 Dec 2008

General Description


The LM194 and LM394 are junction isolated ultra well-matched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs. This was accomplished by advanced linear processing and a unique new device structure.

Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic emitter and base resistances are much lower than presently available pairs, either monolithic or discrete, giving extremely low noise and theoretical operation over a wide current range. Most parameters are guaranteed over a current range of 1 µA to 1 mA and 0V up to 40V collector-base voltage, ensuring superior performance in nearly all applications.

To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current-the most common cause of field failures in matched devices. The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between devices.

The LM194 and LM394 will provide a considerable improvement in performance in most applications requiring a closely matched transistor pair. In many cases, trimming can be eliminated entirely, improving reliability and decreasing costs. Additionally, the low noise and high gain make this device attractive even where matching is not critical.

The LM194 and LM394/LM394B/LM394C are available in an isolated header 6-lead TO-5 metal can package. The LM394/LM394B/LM394C are available in an 8-pin plastic dual-in-line package. The LM194 is identical to the LM394 except for tighter electrical specifications and wider temperature range.

Design Tools


TitleSize in Kbytes Date Click link below to Download    
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Application Notes


TitleSize in Kbytes Date Click link below to Download
AN-222: Application Note 222 Super Matched Bipolar Transistor Pair Sets New Standards for Drift and Noise 399
Kbytes
1-Oct-02 Download

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More Application Notes


TitleSize in Kbytes Date Click link below to Download
AN-184: Application Note 184 References for A/D Converters 64
Kbytes
3-Oct-02 Download
AN-184 (Japanese): Application Note 184 References for A/D Converters
124 Kbytes   Download
AN-161: Application Note 161 IC Voltage Reference has 1 ppm per Degree Drift 138
Kbytes
10-Oct-02 Download
AN-110: Application Note 110 Fast IC Power Transistor with Thermal Protection 333
Kbytes
3-Oct-02 Download

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[Information as of 8-Nov-2009]