Features Rail-to-rail output swing   Micropower operation (<0.5 mW)   Specified for 100 k and 5 k loads   High voltage gain 120 dB Low input offset voltage 3 mV Low offset voltage drift 1.3 µV/°C Ultra low input bias current 2 fA Input common-mode includes GND   Operating range from +5V to +15V   Low distortion 0.01% at 1 kHz Slew rate 0.11 V/µs Full military temperature range available   Description The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW. This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process. See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features. Applications • High-impedance buffer • Precision current-to-voltage converter • Long-term integrator • High-impedance preamplifier • Active filter • Sample-and-Hold circuit • Peak detector

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Datasheet

Title		Size	Date	Other Language
	LPC662 Low Power CMOS Dual Operational Amplifier	600 Kbytes	7-Mar-01	日本語

Featured Application Notes

Title		Size	Date	Other Language
	AN-856: Application Note 856 A SPICE Compatible Macromodel for CMOS Operational Amplifiers	121 Kbytes	1-Oct-02

More Application Notes

Title		Size	Date	Other Language
	AN-856: Application Note 856 A SPICE Compatible Macromodel for CMOS Operational Amplifiers	121 Kbytes	1-Oct-02

Part Number(s) (NSID)	Top View	Availability	Current Reported Stock	Budgetary Pricing	Standard Pack Size
LPC662AIM/NOPB LPC662AIM RoHS	SOIC NARROW	Full production Lead Time: 6 weeks	Distributor Region Qty AVNET-EM Worldwide 5 DIGIKEY Worldwide 4292 FUTURE Worldwide 1100 NEWARK Americas 48 TAYLOR Americas 273	$1.20 each at 1K+ pcs	rail of 95
LPC662IM/NOPB RoHS	SOIC NARROW	Full production Lead Time: 6 weeks	Distributor Region Qty AVNET-EM Worldwide 280 DIGIKEY Worldwide 42 FARNELL Europe and Asia 2192 RS COMPONENTS Worldwide 61	$0.93 each at 1K+ pcs	rail of 95
LPC662AIMX/NOPB LPC662AIMX RoHS	SOIC NARROW	Full production Lead Time: 6 weeks	Distributor Region Qty DIGIKEY Worldwide 0	$1.20 each at 1K+ pcs	reel of 2500
LPC662IMX/NOPB LPC662IMX RoHS	SOIC NARROW	Full production Lead Time: 6 weeks	Distributor Region Qty DIGIKEY Worldwide 0	$0.93 each at 1K+ pcs	reel of 2500
LPC662I MDC RoHS		Lifetime buy Lead Time: N/A	Contact your distributor	CALL	tray of N/A

Obsolete Versions

Obsolete Part	Alternate Part or Supplier	Source	Last Time Buy Date
LPC662AIN	NONE	NONE	08 Sep 1998
LPC662I MDC	NONE	NATIONAL SEMICONDUCTOR	01 Dec 2009
LPC662I MWC	NONE	NATIONAL SEMICONDUCTOR	03 Dec 2008
LPC662IN	NONE	NONE	08 Sep 1998

Design Tools

Title	Size	Date
Amplifiers Selection Guide software for Windows

Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LPC662AIM	P2CMOS	0	49735	0	1	4330000	2	556689228
LPC662AIMX	P2CMOS	0	49735	0	1	4330000	2	556689228
LPC662I MDC	P2CMOS	0	49735	0	1	4330000	2	556689228
LPC662IM	P2CMOS	0	49735	0	1	4330000	2	556689228
LPC662IMX	P2CMOS	0	49735	0	1	4330000	2	556689228

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

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Obsolete Versions

Obsolete Part	Alternate Part or Supplier	Source	Last Time Buy Date
LPC662AIN	NONE	NONE	08 Sep 1998
LPC662I MDC	NONE	NATIONAL SEMICONDUCTOR	01 Dec 2009
LPC662I MWC	NONE	NATIONAL SEMICONDUCTOR	03 Dec 2008
LPC662IN	NONE	NONE	08 Sep 1998