LPC662 - Low Power CMOS Dual Operational Amplifier
Datasheet Packaging Samples & Pricing Reliability Design Tools Models Application Notes Knowledge Base

Features

Rail-to-rail output swing

  

Micropower operation (<0.5 mW)

  

Specified for 100 k and 5 k loads

  

High voltage gain

120 dB

Low input offset voltage

3 mV

Low offset voltage drift

1.3 µV/°C

Ultra low input bias current

2 fA

Input common-mode includes GND

  

Operating range from +5V to +15V

  

Low distortion

0.01% at 1 kHz

Slew rate

0.11 V/µs

Full military temperature range available

  

 

General Description

The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. More...


Applications

•High-impedance buffer
•Precision current-to-voltage converter
•Long-term integrator
•High-impedance preamplifier
•Active filter
•Sample-and-Hold circuit
•Peak detector

ParametersValues
Supply Min 5 Volt
Supply Max 15 Volt
Gain Bandwidth 0.35 MHz
Offset Voltage max, 25C 6, 3 mV
Max Input Bias Current 0.004 nA
Channels 2 Channels
Supply Current Per Channel 0.043 mA
PowerWise Rating 2 122.9 uA/MHz
Input OutputType Vcm to V-, R-R Out
Slew Rate 0.11 Volts/usec
Output Current 21 mA
Shut down No
Voltage Noise 42 nV/root(Hz)
Special Features Undefined
Temperature Min -40 deg C
Temperature Max 85 deg C
Function Op Amp

Additional Resources

Online Seminars Design Tools

Application Notes



Datasheet
RoHS Compliance Information Size in KbytesDate Click link below to Download
LPC662 Low Power CMOS Dual Operational Amplifier 600
Kbytes		 7-Mar-01 Download
LPC662 Low Power CMOS Dual Operational Amplifier (Japanese)
 558 Kbytes   Download

If you have trouble printing or viewing PDF file(s), see Printing Problems.


Package Availability, Models, Samples & Pricing
Part NumberPackageFactory Lead TimeModelsSamples &
Electronic
Orders		Budgetary PricingStd
Pack
Size		Package
Marking
Format
TypePinsSpec.MSL
Rating		Peak
Reflow		RoHS
Report		CAD
Symbols		WeeksQtyQty$US each
LPC662AIMSOIC NARROW8NOPB
STD		1
1		260
235		RoHS Download Full productionLPC662A.MOD
 
Buy Now 		1K+$1.20rail
of
95		NSZXTT
LPC66
2AIM
6 weeks2500
LPC662IMSOIC NARROW8NOPB1260RoHS Download Full productionLPC662B.MOD
Samples
Buy Now 		1K+$0.93rail
of
95		NSZXTT
LPC66
2IM
6 weeks1000
LPC662AIMXSOIC NARROW8NOPB
STD		1
1		260
235		RoHS Download Full productionLPC662A.MOD
 
Buy Now 		1K+$1.20reel
of
2500		NSZXTT
LPC66
2AIM
6 weeks3000
LPC662IMXSOIC NARROW8NOPB
STD		1
1		260
235		RoHS Download Full productionLPC662B.MOD
 
Buy Now 		1K+$0.93reel
of
2500		NSZXTT
LPC66
2IM
6 weeks5000
LPC662I MDCUnpackaged DieLifetime buyN/A
  CALLtray
of
N/A		-
N/AN/A

Obsolete Versions

Obsolete PartAlternate Part or SupplierSourceLast Time Buy Date
LPC662AIN
NONE
NONE
08 Sep 1998
LPC662I MDC
NONE
NATIONAL SEMICONDUCTOR
01 Dec 2009
LPC662I MWC
NONE
NATIONAL SEMICONDUCTOR
03 Dec 2008
LPC662IN
NONE
NONE
08 Sep 1998

General Description

The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.

Reliability Metrics

Part Number Process EFR Reject EFR Sample Size PPM LTA Rejects LTA Device Hours FITS MTTF (Hours)
LPC662AIMP2CMOS0497350143300002556689228
LPC662AIMXP2CMOS0497350143300002556689228
LPC662I MDCP2CMOS0497350143300002556689228
LPC662IMP2CMOS0497350143300002556689228
LPC662IMXP2CMOS0497350143300002556689228

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

For more information on Reliability Metrics, please click here.


Design Tools

TitleSize in Kbytes Date Click link below to Download    
Amplifiers Selection Guide software for Windows     View    

If you have trouble printing or viewing PDF file(s), see Printing Problems.

More Application Notes

TitleSize in Kbytes Date Click link below to Download
AN-856: Application Note 856 A SPICE Compatible Macromodel for CMOS Operational Amplifiers 121
Kbytes		 1-Oct-02 Download

If you have trouble printing or viewing PDF file(s), see Printing Problems.

[Information as of 8-Nov-2009]