National Semiconductor | High-performance Analog

 

 LPC660   
Low Power CMOS Quad Operational Amplifier 		Click link to Download

Features

Rail-to-rail output swing

  

Micropower operation:

(1 mW)

Specified for 100 k and 5 k loads

  

High voltage gain:

120 dB

Low input offset voltage:

3 mV

Low offset voltage drift:

1.3 µV/°C

Ultra low input bias current:

2 fA

Input common-mode includes V-

  

Operation range from +5V to +15V

  

Low distortion:

0.01% at 1 kHz

Slew rate:

0.11 V/µs

Full military temp. range available

  

Description

The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features.


Applications

  • High-impedance buffer
  • Precision current-to-voltage converter
  • Long-term integrator
  • High-impedance preamplifier
  • Active filter
  • Sample-and-Hold circuit
  • Peak detector

    		• Connection Diagram
    click for larger image



    Typical Performance
    click for larger image


     

    ParametersValues
    Supply Min 5 Volt
    Supply Max 15 Volt
    Gain Bandwidth 0.35 MHz
    Offset Voltage max, 25C 6, 3 mV
    Max Input Bias Current 0.004 nA
    Channels 4 Channels
    Supply Current Per Channel 0.04 mA
    PowerWise Rating 2 114.3 uA/MHz
    Input OutputType Vcm to V-, R-R Out
    Slew Rate 0.11 Volts/usec
    Output Current 21 mA
    Shut down No
    Voltage Noise 42 nV/root(Hz)
    Special Features Undefined
    Temperature Min -40 deg C
    Temperature Max 85 deg C
    Function Op Amp

    Datasheets
    TitleSizeDateOther
    Language
    LPC660 Low Power CMOS Quad Operational Amplifier1009
    Kbytes    		6-Dec-04日本語  


    Application Notes
    TitleSizeDateOther
    Language
    AN-856: Application Note 856 A SPICE Compatible Macromodel for CMOS Operational Amplifiers121
    Kbytes    		1-Oct-02 

    Part Number(s)
    (NSID)    		Top ViewAvailabilityCurrent Reported StockBudgetary PricingPack
    Size
    LPC660AIM/NOPB

    LPC660AIM

    RoHS Status

    SOIC NARROW    		Full production
    Lead Time: 8 weeks

     
    DistributorRegionQty
    ARROWWorldwide30
    AVNET-EMWorldwide104
    DIGI-KEYWorldwide75
    FARNELLEurope and Asia31
    NEWARKAmericas35
    TAYLORAmericas30
    		$1.44 each at 1K+ pcsrail
    of
    55
    LPC660AIMX/NOPB

    LPC660AIMX

    RoHS Status

    SOIC NARROW    		Full production
    Lead Time: 8 weeks

     
    DistributorRegionQty
    DIGI-KEYWorldwide0
    		$1.44 each at 1K+ pcsreel
    of
    2500
    LPC660IM/NOPB

    LPC660IM

    RoHS Status

    SOIC NARROW    		Full production
    Lead Time: 6 weeks

     
    DistributorRegionQty
    ARROWWorldwide14
    AVNET-EMWorldwide315
    DIGI-KEYWorldwide611
    TAYLORAmericas14
    		$1.12 each at 1K+ pcsrail
    of
    55
    LPC660IMX/NOPB

    LPC660IMX

    RoHS Status

    SOIC NARROW    		Full production
    Lead Time: 6 weeks

     
    DistributorRegionQty
    AVNET-EMWorldwide2500
    DIGI-KEYWorldwide0
    MOUSERWorldwide2500
    		$1.12 each at 1K+ pcsreel
    of
    2500

    Obsolete Versions
    Obsolete PartAlternate Part or SupplierSourceLast Time Buy Date
    LPC660AIN
    		NONE
    		NONE
    		08 Sep 1998
    LPC660AMJ/883
    		NONE
    		NONE
    		09 Mar 1999
    LPC660IN
    		NONE
    		NONE
    		08 Sep 1998

    All information pertaining to the RoHS Compliance Standard can be found at http://www.national.com/en/packaging/leadfree.html.

    Moisture Sensitivity Level Data for LPC660.

    A RoHS compliance or an IPC 1752 report can be acquired at http://www.national.com/en/packaging/greennopb.html.

    National's certificate of product compliance for LPC660 is located at RoHS Status.

    Part Number(s)
    (NSID)    		Weight
    (milligrams)    		TypePinsMSL RatingPeak ReflowRoHS
    Status    		CAD SymbolsModelsPackage
    Marking
    Format
    LPC660AIM/NOPB

    LPC660AIM
    		129.551
    130.001
    		SOIC NARROW141
    1    		260
    235    		DetailDownloadspice file
    		NSUZXYTTE#
    LPC660AIM
    LPC660AIMX/NOPB

    LPC660AIMX
    		129.551
    130.001
    		SOIC NARROW141
    1    		260
    235    		DetailDownloadspice file
    		NSUZXYTTE#
    LPC660AIM
    LPC660IM/NOPB

    LPC660IM
    		129.551
    130.001
    		SOIC NARROW141
    1    		260
    235    		DetailDownloadspice file
    		NSUZXYTTE#
    LPC660IM
    LPC660IMX/NOPB

    LPC660IMX
    		129.551
    130.001
    		SOIC NARROW141
    1    		260
    235    		DetailDownloadspice file
    		NSUZXYTTE#
    LPC660IM

    All information pertaining to the RoHS Compliance Standard can be found at http://www.national.com/en/packaging/leadfree.html.

    Moisture Sensitivity Level Data for LPC660.

    A RoHS compliance or an IPC 1752 report can be acquired at http://www.national.com/en/packaging/greennopb.html.

    National's certificate of product compliance for LPC660 is located at RoHS Status.

    Design Tools
    TitleSizeDate
    Amplifiers Selection Guide software for Windows  

    CAD Symbols and Models
    Download LPC660 CAD Symbols
    		 Models
    spice file


    Reliability Metrics
    Part Number Process EFR Reject EFR Sample Size PPM LTA Rejects LTA Device Hours FITS MTTF (Hours)
    LPC660AIMP2CMOS0508600145035002578995367
    LPC660AIMXP2CMOS0508600145035002578995367
    LPC660IMP2CMOS0508600145035002578995367
    LPC660IMXP2CMOS0508600145035002578995367

    Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

    For more information on Reliability Metrics, please click here.


    All information pertaining to the RoHS Compliance Standard can be found at http://www.national.com/en/packaging/leadfree.html.

    Moisture Sensitivity Level Data for LPC660.

    A RoHS compliance or an IPC 1752 report can be acquired at http://www.national.com/en/packaging/greennopb.html.

    National's certificate of product compliance for LPC660 is located at RoHS Status.

    Obsolete Versions
    Obsolete PartAlternate Part or SupplierSourceLast Time Buy Date
    LPC660AIN
    		NONE
    		NONE
    		08 Sep 1998
    LPC660AMJ/883
    		NONE
    		NONE
    		09 Mar 1999
    LPC660IN
    		NONE
    		NONE
    		08 Sep 1998

    [Information as of 9-Feb-2012]
    Copyright © 2011 National Semiconductor Corporation