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LF356 -
JFET Input Operational Amplifiers
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Features
Advantages
| • | Replace expensive hybrid and module FET op amps |
| • | Rugged JFETs allow blow-out free handling compared with MOSFET input devices |
| • | Excellent for low noise applications using either high or low source impedance-very low 1/f corner |
| • | Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers |
| • | New output stage allows use of large capacitive loads (5,000 pF) without stability problems |
| • | Internal compensation and large differential input voltage capability |
General Description
These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). More...
Applications
| • | Precision high speed integrators |
| • | Fast D/A and A/D converters |
| • | High impedance buffers |
| • | Wideband, low noise, low drift amplifiers |
| • | Logarithmic amplifiers |
| • | Photocell amplifiers |
| • | Sample and Hold circuits |
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Typical Application
click for larger image
| Parameters | Values |
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| Gain Bandwidth |
5 MHz |
| Channels |
1 Channels |
| Input OutputType |
Vcm to V+, Not R-R Out |
| Slew Rate |
12 Volts/usec |
| Supply Min |
10 Volt |
| Supply Max |
36 Volt |
| Offset Voltage max, 25C |
10 mV |
| Supply Current Per Channel |
5 mA |
| PowerWise Rating 2 |
1000 uA/MHz |
| Max Input Bias Current |
8 nA |
| Output Current |
25 mA |
| Voltage Noise |
12 nV/root(Hz) |
| Shut down |
No |
| Function |
Op Amp |
| Temperature Min |
0 deg C |
| Temperature Max |
70 deg C |
Typical Performance
click for larger image
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Also Recommended
| LMV712▲ | Rail-to-rail Input & Output, Shutdown |
Additional Resources
Design Tools
Application Notes
Connection Diagram
click for larger image
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Datasheet
RoHS Compliance Information
| Size in Kbytes | Date |
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| LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers |
1079
Kbytes |
17-Dec-01 |
Download |
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers (Japanese)
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921 Kbytes |
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Package Availability, Models, Samples & Pricing
| Obsolete Part | Alternate Part or
Supplier | Source | Last Time Buy Date |
LF356BH
| NONE
| NATIONAL SEMICONDUCTOR
| 03 Dec 2008
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LF356BM
| NONE
| NONE
| 10 Mar 1998
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LF356BMX
| NONE
| NONE
| 10 Mar 1998
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LF356BN
| NONE
| NONE
| 10 Mar 1998
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General Description
These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
Reliability Metrics
| Part Number |
Process |
EFR Reject |
EFR Sample Size |
PPM |
LTA Rejects |
LTA Device Hours |
FITS |
MTTF (Hours) |
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LF356M | BIFET | 0 | 12875 | 0 | 0 | 1065000 | 4 | 302196657
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LF356MX | BIFET | 0 | 12875 | 0 | 0 | 1065000 | 4 | 302196657
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LF356N | BIFET | 0 | 12875 | 0 | 0 | 1065000 | 4 | 302196657
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Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR.
The Long Term Failure Rates were calculated
at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress
temperature of 150°C to an application temperature of 55°C.
For more information on Reliability Metrics, please click here.
Design Tools
| Title | Size in Kbytes |
Date |
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| Amplifiers Selection Guide software for Windows |
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View |
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Application Notes
| Title | Size in Kbytes |
Date |
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| AN-447: Protection Schemes for BI-FET Amplifiers and Switches |
76
Kbytes |
4-Nov-95 |
Download |
| AN-293: Application Note 293 Control Applications of CMOS DACs |
385
Kbytes |
4-Oct-04 |
Download |
| AN-263: Application Note 263 Sine Wave Generation Techniques |
350
Kbytes |
26-May-09 |
Download |
| AN-272: Application Note 272 Op Amp Booster Designs |
382
Kbytes |
2-Oct-02 |
Download |
| AN-275: Application Note 275 CMOS D/A Converters Match Most Microprocessors |
127
Kbytes |
2-May-04 |
Download |
| AN-294: Application Note 294 Special Sample and Hold Techniques |
233
Kbytes |
4-Oct-04 |
Download |
| AN-311: Application Note 311 Theory and Applications of Logarithmic Amplifiers |
258
Kbytes |
2-Oct-02 |
Download |
| AN-480: A 40 MHz Programmable Video Op Amp |
181
Kbytes |
4-Nov-95 |
Download |
| AN-260: Application Note 260 A 20-Bit (1 ppm) Linear Slope-Integrating A/D Converter |
148
Kbytes |
3-Oct-02 |
Download |
| AN-253: Application Note 253 LH0024 and LH0032 High Speed Op Amp Applications |
461
Kbytes |
2-May-04 |
Download |
| AN-258: Application Note 258 Data Acquisition Using the ADC0816 and ADC0817 8-Bit A/D Converter with On-Chip 16 Channel Multiplexer |
683
Kbytes |
4-Oct-04 |
Download |
More Application Notes
| Title | Size in Kbytes |
Date |
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| AN-292: Application Note 292 Applications of the LM3524 Pulse-Width-Modulator |
239
Kbytes |
3-Oct-02 |
Download |
| AN-262: Application Note 262 Applying Dual and Quad FET Op Amps |
416
Kbytes |
2-Oct-02 |
Download |
| AN-240: Application Note 240 Wide-Range Current-to-Frequency Converters |
126
Kbytes |
3-Oct-02 |
Download |
| AN-210: Application Note 210 New Phase-Locked-Loops Have Advantages as Frequency to Voltage Converters (and more) |
339
Kbytes |
3-Oct-02 |
Download |
| AN-271: Application Note 271 Applying the New CMOS MICRO-DAC |
230
Kbytes |
4-Oct-04 |
Download |
AN-271 (Japanese): Application Note 271 Applying the New CMOS MICRO-DAC
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342 Kbytes |
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[Information as of 8-Nov-2009]
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