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National Semiconductor Corporation strives to achieve best-in-class quality and reliability performance on all their products through a systematic approach that emphasizes quality at every phase of product development through manufacturing. From initial design conception to fabrication, test, and assembly; quality is built-in and assured through stringent SPC monitoring of fabrication and assembly processes, materials inspections, wafer level reliability (WLR), new product qualifications, reliability monitoring of finished product and strict change control management.
What is Reliability?
Reliability is the characteristic expressed by the probability that the part will perform its intended function for a specific period of time under defined usage conditions.
Reliability Failures
There are 2 basic types of failures, Early Failures and Wear Out Failures. These are reflected in the curve known as the Bathtub curve.

National Semiconductor uses Reliability Testing to ensure all its products are below targets set for Early Failure Rates in PPM and Wear Out Failures in FITs.
Qualification
New Processes and New Packages
New Processes and New Packages are qualified using a minimum 3 lot (77 units per lot) testing for:
- Early Failure Testing (915 samples)
- Operating Life Test
- Temp and Humidity Biased Test
- Temperature Cycling
- Auto-Clave
- ESD/Latch-Up
- Board Level Temp Cycle (for packages)
Power Cycling and Data Retention Testing is also done when applicable.
Smart Quals
Products designed to Process and Package Design Rules and using Qualified Processes and Packages are released using 168hr Rel Data.
This approach supports Time to Market needs without compromising Reliability.
To ensure there is no customer risk, National has continuous reliability monitoring in place.
Reliability Monitor Program
An Ongoing Reliability Monitor is in place to ensure that products manufactured to Qualified Processes under Qualified Reliability Standards, has not drifted.
Results of the Rel Monitor Program are published on National’s Quality Web Page; Test Frequency is as posted below.
| TEST |
FREQUENCY |
EFR
(All major processes) |
Every week |
OPL (1000 hr)
THBT (1000 hr)
ACLV (96 hr)
TMCL (1000 cycles) |
Every 8 weeks
Every 8 weeks
Every 8 weeks
Every 8 weeks |
Fix Reliability Testing Capabilities Reliability Test Services and ESD and Latch-Up Testing Labs are fully equipped to support the Reliability Qualification Testing. Details of the Lab Equipment are listed in the following two tables. Reliability Testing Services Equipment Inventory
Dynamic Operating Life (Op Life)
13 ADEC burn-in ovens
3 Wakefields
1 AMT |
65 to 160°C
65 to 160°C
65 to 160°C |
Comments:
Vector driven
Driver board dr.
Driver board dr. |
Static Operating Life
4 Jarvis ovens
9 Marin |
65 to 160°C
65 to 160°C |
|
Temp & Humidity (T&H)
12 BLUM M ovens |
85 C at 85% humidity (normal) |
Can do:
20 to 90 C at 30 to 90% humidity |
Temp Cycles
2 Blue M Systems
4 Ransco systems (batch loaded) |
-40 to 125°C
-65 to 150°C
-40 to 60°C
0 to 125°C |
200lbs. Each
1 - 200lbs, 2 – 40lbs
1 - 151lbs |
Auto-Clave (ACLV)
5 Dispatch systems (batch loaded) |
121 C at 15 PSI |
|
High Accelerated Stress Test (HAST)
2 Hirayama
1 Express
1 Dispatch |
135C at 85% RH/PSI
135C at 85% RH/PSI
135C at 85% RH/PSI |
Board loaded voltage applied |
Power Temp Cycle
1 Thermo Dynamic system
3 ICA1 systems |
40 to 125°C (Ambient)
40 to 125°C (Ambient) |
Board loaded voltage applied
Board loaded voltage applied |
Air Power Cycle
2 Approval systems |
25 to 150°C (Ambient) |
Board loaded voltage applied |
Water Power Cycle
- 1 Approval systems |
25 to 150°C (Ambient) |
Board loaded voltage applied |
Thermo Shock (Liquid to Liquid)
- 1 Approval systems |
|
|
Electromigration
- 1 Micro-instrument |
210C, 175C, 150C |
Forcing current |
Highly Accelerated Life Test
(HALT)
- 1 Qualmark System |
Vibration and thermal3 axis, plus 65C to 150°C |
BSBO – Ethernet cards
Plexis/Tigris |
Equipment in the ESD/Latch-Up Lab
| |
Max Pins |
HBM Voltage |
MM
Voltage |
IEC 1000
Capable |
On Board Clock |
Vectored Latch-up |
Keytek
Zap
Master |
256 |
25 - 12000 |
25 - 2000 |
Yes |
No |
No |
| RCDM |
N/A |
50 - 4000 |
N/A |
No |
No |
No |
| MK-2 |
768 |
50 - 8000 |
50 - 2000 |
No |
Yes |
Yes |
Failure Mechanisms/Failure Models
Various failure mechanisms are tested during Rel Testing. Major ones are listed below.
Failure Mechanism and Model
| Failure Mechanism |
Failure Model |
| Electromigration |
Blacks Model |
| Excessive Intermetallics |
Kidsons Model |
| Reverse Bias Breakdown |
Tasca |
| Stress Dependent Diffusive Voiding |
Okabayashi Model n NE 1, Okabayashi Model n EQ 1 |
| Time Dependent Dielectric Breakdown |
Fowler Nordhiem Tunnel Model |
| Slow Trapping |
Positive Gate Voltage Model, Negative Gate Voltage Model |
| Metallization Corrosion |
Plastic Metal Corrosion, Hermetic Metal Corrocion |
| Die fracture |
Westergaard Bolger Model Die, Suhirs Vert Crack Model Die, Suhirs Horz Crack Model Die, Westergaard Model Power, Suhirs Horz Crack Power |
| Modular Case Fatigue |
Shear Fatigue Model Case |
| Modular Case Fracture |
Shear Fatigue Model Case |
| Substrate Fracture |
Westergaard Bolger Model Sub, Suhirs Vert Crack Model Sub, Suhirs Horz Crack Crack Model Sub |
| Die Attach Fatigue |
Attach Fracture Model Brittle, Attach Fatigue Model Brittle, Tensile Fatigue Model Ductile, Shear Fatigue Model ductile, Raja Die Attach Fatigue |
| BGA Solder Fatigue |
Time to fail by Creep, Coffin Manson BGA Solder Fat |
| Discrete Solder Fatigue |
Dis Solder Jnt Cap 90pb10sn, Dis Soldr Jnt Fat Cap 63sn37pb |
| Flip Chip Solder Fatigue |
Inner Flip Chip Revised, Hybrid Flip Chip Revised |
| Lead Seal Fracture |
Principal Stress Model |
| Lead Solder Joint Fatigue |
Thermal Cycle Fatigue Model |
| Lid Seal Fracture |
Tensile Strength Model |
| Substrate Attach Fatigue |
Substrate Attach Fracture Model, Substrate Attach Fatigue Model |
| Wire Bond Fatigue |
Hu Pecht Dasgupta Model, Wirebond Pad Shear Failure, Bond Pad Fatigue Revised |
| Wire Fatigue |
Hu Pecht Dasgupta Model |
| Electro Static Discharge |
Wunsch and Bell Model, Wunsch and Bell Model, Wunsch and Bell Model |
Determination of Failure Rate (Point Estimate)
Failure rate can be determined by using actual test results. Determine "demonstrated" failure rate from actual test data as follows:
Failure Rate=No. rejects/sample size x no. hours
Example 1. Assume a sample size of 13500, 2 failures and test duration of 500 hours. To calculate FR:
FR = 2 rejects/13500 devices x 500 hours
FR = 2/6750000 device-hours=0.000000296 rejects per device-hour
296 FITS
or 3375,000hours MTBF (reciprocal of 0.000000296)
In expressing Failure Rate, the equivalent values below may be helpful.
| No. Failure Per Device-Hours |
Failure Rate |
% Per 1000 Hours |
PPM (Hours) |
FITS |
MTBF (Hour) |
| 1/1 x 109 |
0.000000001 |
0.0001 |
0.001 |
1 |
1 x 109 |
| 1/1 x 108 |
0.00000001 |
0.001 |
0.01 |
10 |
1 x 108 |
| 1/1 x 107 |
0.0000001 |
0.01 |
0.1 |
100 |
1 x 107 |
| 1/1 x 106 |
0.000001 |
0.1 |
1 |
1000 |
1 x 106 |
| 1/100,000 |
0.00001 |
1.0 |
10 |
10,000 |
1 x 105 |
| 1/10,000 |
0.0001 |
10.0 |
100 |
100,000 |
1 x 104 |
| 1/1,000 |
0.001 |
100 |
1000 |
1,000,000 |
1 x 103 |
Determination of Failure Rate (Statistical Estimates)
In addition to point estimates, FR and MTBF may be estimated by using the chi-square statistic at 2 (r + 1) degrees of freedom. The 50% probability statistic would give the "best estimate", the 60% or 90% probability statistic would give the upper confidence limit.
Acceleration Factors
In order to express accelerated test results in terms of expected failure rate at actual use conditions, semiconductor manufacturers commonly use the Arrhenius model.
The Arrhenius model assumes that degradation of a performance parameter is linear with time, with the rate of degradation depending on the temperature stress. To put it another way, the Arrhenius equation relates the time rate of change of a process to the temperature at which the process is taking place.
If appropriate, the calculated acceleration factors listed in the following table may be used.
Acceleration Factors for Common Junction Temperatures
and Common Activation Energies
Est. RJ Accel.
Tests |
Estimated TJ9
Normal Use Application |
Activation Energies |
| |
25°C |
35°C |
40°C |
45°C |
50°C |
55°C |
60°C |
70°C |
85°C |
eV |
| 125°C |
49 |
31 |
23 |
18 |
15 |
12 |
9.6 |
6.4 |
3.7 |
|
| 130°C |
58 |
35 |
27.5 |
22 |
17.4 |
14 |
11.3 |
7.5 |
4.3 |
0.4 |
| 150°C |
89 |
60 |
47 |
37.4 |
29.8 |
24 |
19.4 |
12.9 |
7.3 |
|
| 125°C |
134 |
71 |
52.7 |
39.4 |
29.7 |
22.6 |
17.3 |
10.4 |
5.1 |
|
| 130°C |
160 |
85 |
63.1 |
47 |
35.5 |
27.1 |
20.7 |
12.4 |
6.1 |
0.5 |
| 150°C |
317 |
169 |
124 |
92.6 |
69.9 |
53.4 |
40.8 |
24.5 |
12 |
|
| 125°C |
942 |
388 |
255 |
171 |
114 |
77.6 |
54 |
26 |
9.7 |
|
| 130°C |
1,218 |
500 |
330 |
219 |
148 |
101 |
69 |
34 |
12.6 |
0.7 |
| 150°C |
3,159 |
1,300 |
855 |
569 |
383 |
259.1 |
180 |
88 |
32.7 |
|
| 125°C |
2,540 |
914 |
567 |
358 |
226 |
145 |
95.6 |
43.4 |
13.6 |
|
| 130°C |
3,377 |
1,221 |
754 |
476 |
300 |
193 |
127 |
57.7 |
18.1 |
0.8 |
| 150°C |
10,041 |
3,632 |
2,240 |
1,414 |
893 |
575 |
378 |
171 |
53.8 |
|
| 125°C |
6,691 |
2,140 |
1,250 |
735 |
449 |
272 |
168 |
67 |
18.8 |
|
| 130°C |
9,174 |
2,964 |
1,710 |
1,006 |
616 |
370 |
229 |
92.2 |
26 |
0.9 |
| 150°C |
31,256 |
10,100 |
5,825 |
3,429 |
2,101 |
1,261 |
781 |
314 |
88.2 |
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Calculation of Applicable Junction Temperature
Failure rates and MTBFs obtained from Operating Life Tests pertain when the junction temperature is the same as the ambient test temperature. Temperatures used during OPL tests are usually TA=125°C or TA=150°C. In most cases, these ambient temperatures are very close to the junction temperature TJ . However, when a significant difference between TA and TJ exists, respective TJ must be considered. This would be the case with parts that dissipate significant amounts of power, such as certain linear and MOS devices.

Confidence Factors
The failure rate resulting from a High Temperature Bias test is an average, or estimate, of the typical expected failure rate for a product or process; but has no statistical boundaries established.
National Semiconductor generally states the upper 60% confidence limit for failure rate estimate using the chi-squares statistic, per the following formula.

Values of chi square are found in a number of statistical tables. A few more typical values are shown as follows:
Percentiles of the Chi2 Distribution
(Values of Chi2 corresponding to certain selected probabilities)
| Typical Use |
AQL |
Best Estimate |
60% Confidence |
LTPD or 90% Confidence |
| Probability in % |
5.0 |
50.0 |
60.0 |
90.0 |
 |
0.05 |
0.50 |
0.60 |
0.90 |
| df |
Total Failures |
|
|
|
|
|
2
4
6
8
10
12
14
16
18
20
22
26
32
42
|
0
1
2
3
4
5
6
7
8
9
10
12
15
20
|
0.103
0.711
1.640
2.730
3.940
5.230
6.570
7.960
9.390
10.900
12.800
15.400
20.100
28.200
|
1.390
3.360
5.350
7.340
9.340
11.300
13.300
15.300
17.300
19.300
21.300
25.300
31.300
41.300
|
1.830
4.040
6.210
8.350
10.500
12.600
14.700
16.800
18.900
21.000
23.000
27.200
33.400
43.700
|
4.61
7.78
10.60
13.40
16.00
18.50
21.10
23.50
26.00
28.40
30.80
35.60
42.60
54.10
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