|
Scribing and Chipping rejection criteria:
< 0.1 mil of passivation visible between operating metallization and bare semiconductor material. This criteria can be excluded for peripheral metallization that is at the same potential as the die. Die potential is at ground for all products except CMOS, where die potential is at VDD.
A chip-out or crack in the active circuit area. This criteria can be excluded for peripheral metallization that is at the same potential as the die. At least 50% undisturbed metallization width shall remain at the chip-out.
Chip out in corner of die at right extends into active bond pad metallization and as such is unacceptable.
|
 |
A crack > 5.0 mils in length.
Die having attached portions of the active circuit area of another die.
A crack that extends 1.0 mil in length inside the scribe grid or scribe lane that points toward operating metallization or functional circuit elements.
Four-sided peripheral metal, that is the same potential as the die, is rejectable when it exhibits a crack or chip that reduces the metal to < 50% of its original width and a second defect that totally isolates a contact from the remainder of the peripheral metal.
|
